linear inte grated systems ? 4042 clipper court ? fremont, ca 94538 ? tel: 510 490 - 9160 ? fax: 510 353 - 0261 doc 201116 05/15/2014 rev#a4 ecn# ls301 ls302 ls303 features very high gain h fe 2000 @ 1.0a typ. low output capacitance c obo 2.0pf tight v be matching iv be1 - v be2 i =0.2m v typ. high f t 100 mhz absolute maximum ratings note 1 @ 25 c (unless otherwise stated) i c collector current 5ma maximum temper atures storage temperature - 55 to +150 c operating junction temperature - 55 to +150 c maximum power dissipation one side both sides device dissipation @ free air 250mw 500mw linear derating factor 2.3mw/c 4.3mw/c electric al characteristics @ 25 c (unless otherwise stated) symbol characteristic ls301 ls302 ls303 units conditions bv cbo collector to base voltage 18 35 10 min. v i c = 10a i e = 0 bv ceo collector to emitter voltage 18 35 10 min. v i c = 1m a i b = 0 bv e bo emitter - base breakdown voltage 6.0 6.0 6.0 min. v i e = 10a i c = 0 note 2 bv cc o collector to collector voltage 80 80 2 0 min. v i c = 1 a i e = i b = 0 h fe dc current gain 2000 1000 2000 typ. i c = 1a v ce = 5v h fe dc current gain 2000 1000 2000 min. i c = 10a v ce = 5v h fe dc current gain 2000 1000 2000 typ. i c = 500a v ce = 5v v c e (sat) collector saturation voltage 0.5 0.5 0.5 max. v i c = 1ma i b = 0.1ma i cbo collector cutoff current 100 100 100 max. pa i e = 0 v cb = note 3 i ebo emitter cutoff cur rent 0.2 0.2 0.2 max. pa i e = 0 v eb = 3v c obo output capacitance 2 2 2 max. pf i e = 0 v cb = 1v c c1c2 collector to collector capacitance 2 2 2 max. pf v cc = 0 i c1c2 collector to collector leakage current 1.0 1.0 1.0 max. a v cc = note 4 , i e = i b = 0 f t current gain bandwidth product 100 100 100 min. mhz i c = 200a v ce = 5v nf narrow band noise figure 3 3 3 max. db i c = 10a v ce = 3v bw = 200hz r g = 10k f = 1khz ls301 ls3 02 ls303 high voltage super - beta monolithic dual npn transistors to - 71 & to - 78 top view soic top view
linear inte grated systems ? 4042 clipper court ? fremont, ca 94538 ? tel: 510 490 - 9160 ? fax: 510 353 - 0261 doc 201116 05/15/2014 rev#a4 ecn# ls301 ls302 ls303 matching characteristics symbol characteristic ls301 ls 302 ls303 units conditions iv be1 - v be2 i base emitter voltage differential 0.2 0.2 0.2 typ. m v i c = 10a v ce = 5v 1 1 1 max. mv i(v be1 - v be2) i /c base emitter voltage differential 1 1 1 typ. v /c i c = 10a v ce = 5v change with temperature 5 5 5 max. v/c t = 55c to +125c ii b1 - i b2 i base current differential 0.5 1 0.5 typ. na i c = 10a v ce = 1v 1 5 1.5 max. na i c = 1 0 a v ce = 5v h fe1 /h fe2 dc current gain differential 5 5 5 typ. % i c = 10a v ce = 5v notes: 1. these ratings are limiting values above which the serviceability of any semiconductor may be impaired 2. the reverse base - to - emitter voltage must never exceed 6.0 volts; t he reverse base - to - emitter current must never exceed 10 amps. 3. for ls301 & ls302: v cb =10v; for ls303: v cb =5v 4. for ls301 & ls302: v cc = 80v; for ls303: v cc = 20 v information furnished by linear integrate d systems is believed to be accurate and reliable. however, no responsibility is assumed for its use; nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise unde r any patent or patent rights of linear integrated systems. 0.210 0.17 0 8 8 4 4 0.210 0.170 linear integrated systems (lis) is a 25 - year - old, third - generation precision semiconductor company providing hig h - quality discrete components. expertise brought to lis is based on processes and products developed at amelco, union carbide, intersil and micro power systems by c ompany president john h. hall. hall, a protg of silicon valley legend dr. jean hoerni, was the director of ic development at union carbide, co - founder and vice p re sident of r&d at intersil, and founder/p resident of micro power systems.
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